Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier

Hao Lu,Xiaohua Ma,Bin Hou,Ling Yang, Teng Huo,Zeyan Si,Yue Hao

2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)（2021）

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摘要

In this paper, low resistance ohmic contacts to high Al-composition AlN barrier have been studied. Several different schemes: direct contact without recessed, selective area recessed ohmic contact with different dimensions, and the whole area recessed ohmic contact have been comprehensively compared. Surface roughness has been evaluated by atomic force microscope (AFM). The TLM results show a low ...

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关键词

Surface resistance,Millimeter wave technology,Contact resistance,Surface roughness,Ohmic contacts,Rough surfaces,III-V semiconductor materials

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