Bits Mapping in Triple-level-cell (TLC) Charge-trap (CT) 3D NAND Flash Memory and its Applications to IoT Security

2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)(2021)

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摘要
Error bits distributions in Triple-level-cell (TLC) charge-trap (CT) 3D NAND flash memory chips are studied systematically in this work. It is found that, firstly, hard error bits exist without dependences on the data patterns; secondly, soft error bits can be observed when programming a certain data pattern, and the distributions are unique in each block; thirdly, random errors can be distinguish...
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关键词
Integrated circuit technology,Three-dimensional displays,Data security,Conferences,Memory management,Fingerprint recognition,Programming
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