Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment

Nan Sun,Huolin Huang,Zhonghao Sun,Ronghua Wang, Shuxing Li,Pengcheng Tao,Yongshuo Ren,Shukuan Song,Hongzhou Wang,Shaoquan Li,Wanxi Cheng,Huinan Liang

IEEE Transactions on Electron Devices（2022）

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摘要

Robust and reliable gate scheme is crucial in developing the enhancement-mode (E-mode) AlGaN/GaN metal–insulator–semiconductor (MIS)-high electron mobility transistors (HEMTs). This work reports on a method of mixed oxygen and fluorine plasma pretreatment combined with selected bi-layer gate dielectrics to improve the performances of partially recessed-gate MIS-HEMTs. The fabricated E-mode HEMTs e...

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关键词

Logic gates,Plasmas,MODFETs,HEMTs,Leakage currents,Wide band gap semiconductors,Aluminum gallium nitride

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