A Technology Path for Scaling Embedded FeRAM to 28 nm and Beyond With 2T1C Structure

Hf0.5Zr0.5O2 (HZO) ferroelectric random access memory (FeRAM) has been demonstrated in 130 nm node with 1T1C structure. To scale FeRAM to 28 nm or beyond, a high aspect ratio embedded dynamic random-access memory (eDRAM)-like 3-D cylinder capacitor is expected to ensure sufficient cell capacitance and sense margin. In this work, we investigate an alternative approa...