Analytical Model on the Threshold Voltage of p-Channel Heterostructure Field-Effect Transistors on a GaN-Based Complementary Circuit Platform

To realize the complementary circuit on the GaN-on-Si platform, an investigation of p-channel heterostructure field-effect transistors (p-HFETs) is necessary. In this study, an analytical model for the estimation of the threshold voltage ( ${V}_{\text {TH}}$ ) for GaN-based p-HFETs was developed. In this model, the impact of po...