Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology
IEEE Transactions on Electron Devices(2022)
摘要
The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a low-voltage SiC technology for integrated circuits is o...
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关键词
Silicon carbide,Temperature measurement,CMOS technology,Logic gates,Semiconductor device measurement,Threshold voltage,Substrates
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