Scattering defect in titanium doped sapphire crystal obtained by Kyropoulos technique

The Kyropoulos technique allows growing large diameter Ti doped sapphire for Chirped pulse amplification laser. A scattering defect peculiar to Kyropoulos grown crystals is presented. This defect is characterized by different techniques: luminescence, absorption measurement, X-ray rocking curve. The impact of this defect to the potential application in chirped pulse amplification CPA laser is evaluated. The nature of this defect is discussed. Modified convexity of the interface is proposed to avoid the formation of this defect and increase the quality of the Ti sapphire crystal.