Biaxial Strain-Induced Electronic Structure and Optical Properties of SiP2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{documen

The electronic and optical properties of a two-dimensional (2D) pristine SiP2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_{2}$$\end{document}S monolayer under biaxial strain effect are investigated by means of density functional theory. Firstly, we have highlighted the band gap under biaxial strain. The SiP2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_{2}$$\end{document}S monolayer is an indirect semiconductor material. Its obtained electronic band structures demonstrate that its band gap can be modulated by the strain. It has been observed that, when the tensile (compressive) strain increases, the band gap of the SiP2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_{2}$$\end{document}S monolayer decreases (increases). Secondly, its optical properties were examined under the strain effect, from which it was explicitly shown that different absorption spectra are obtained at different strain values. Thus, the proposed material is extremely suitable for use in adjustable detectors for optoelectronic applications.