Erbium-doped oxide for optical gain on hybrid silicon photonics platforms

Increase of power consumption on integrated optical devices for photonic applications has encouraged material engineering to explore new materials and its properties. One of the main challenges on silicon photonics for optical applications is the hybrid integration of these materials due to the lattice mismatch imposed by silicon. In this regard, yttria-stabilized zirconia (YSZ) with a lattice parameter similar to silicon and several functional oxides has been widely studied [1]. Moreover, YSZ waveguides have demonstrated low propagation loss, and no two photon absorption (TPA). Furthermore, it is transparent from the ultraviolet to the near-infrared and exhibit good Kerr effect. It was recently demonstrated about 2 dB/cm propagation losses in waveguides etched on YSZ at a wavelength of 1380 nm [2]. In order to grow an active material as waveguide cladding, we doped YSZ with Er ions with a wavelength emission within the C-band of telecommunication window (=1530 nm). In our study, we have considered Er:YSZ cladding deposited by Pulsed Laser Deposition (PLD) on a hybrid SiNx waveguide. Moreover, we demonstrated guided emission for near-IR transitions of erbium ions under continuous-wave pump laser excitation at 1480 nm. Enhancement of Er ion output signal at 1530nm will be discussed and explored and preliminary optical gain will be presented.