Comparison of Total Ionizing Dose Effects in SOI FinFETs Between Room and High Temperature
IEEE Transactions on Nuclear Science（2021）
Key words
Radiation effects,FinFETs,Logic gates,Threshold voltage,Temperature,Silicon-on-insulator,Degradation,High temperature,silicon on insulator (SOI) FinFET (FF),synergetic effects,threshold voltage (V-TH),total ionizing dose (TID)
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined