Sources of Variability in Scaled MoS2 FETs

Quentin Smets,Devin Verreck,Yuanyuan Shi,Goutham Arutchelvan,Benjamin Groven,Xiangyu Wu,Surajit Sutar,Sreetama Banerjee,Ankit Nalin Mehta,Dennis Lin,Inge Asselberghs,Iuliana Radu

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2020）

引用 16|浏览10

关键词

device fabrication,scaled FET,device dimensions,subthreshold swing degradation,thin-channel FET,second layer crystals,Pelgrom slope,physical characterization,electrical measurements,3D TCAD simulations,subthreshold swing variability,size 2.6 nm,size 0.8 nm,voltage 2.8 mV,MoS2,Si

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