Analysis of ALD Dielectric Leakage in Bulk GaN MOS Devices

Caleb E. Glaser,Andrew T. Binder,Luke Yates,Andrew A. Allerman,Daniel F. Feezell,Robert J. Kaplar

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)（2021）

引用 1|浏览3

暂无评分

摘要

This study analyzes the ability of various processing techniques to reduce leakage current in vertical GaN MOS devices. Careful analysis is required to determine suitable gate dielectric materials in vertical GaN MOSFET devices since they are largely responsible for determination of threshold voltage, gate leakage reduction, and semiconductor/dielectric interface traps. SiO2, Al2更多

查看译文

关键词

Silicon compounds,Temperature measurement,MOSFET,Annealing,Electric breakdown,Films,Logic gates

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要