Design and Fabrication of SiC based Stepper Motor Driver for High-Temperature Environments

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)(2021)

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摘要
This paper describes the manufacturing procedure, testing and application of a high temperature (HT) and radiation tolerant silicon carbide (SiC) semiconductor device technology used to fabricate a stepper motor driver circuit for HT spacecraft applications. The proposed circuit employs 4H-SiC MOSFET technology and diodes designed to operate at high ambient temperatures (>400°C). The discrete F...
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关键词
MOSFET,Silicon carbide,Bidirectional control,Logic gates,Gate drivers,Semiconductor diodes,Power conversion
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