Best Practices to Quantify Linearity Performance of GaN HEMTs for Power Amplifier Applications

Rafael Perez Martinez,David J. Munzer,Xin Yu Zhou,Bhawani Shankar, Else-Marie Schmidt, Kenn Wildnauer,Barry Wu,Boris Murmann,Srabanti Chowdhury

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)（2021）

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摘要

In this paper, we discuss the limitations of using conventional linearity metrics (i.e., OIP3 and OP1dB) to evaluate the linearity performance of GaN HEMTs for power amplifier (PA) applications. Unlike Silicon and other traditional III-V devices, GaN HEMTs suffer from soft compression, making the use of conventional metrics “unfair” when compared to other transistor technolog...

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关键词

Performance evaluation,Photonic band gap,Linearity,Power amplifiers,HEMTs,Silicon,Transistors

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