Cryogenic In-MRAM Computing

2021 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)(2021)

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摘要
In the computation storage separated von-Neumann architecture, memory-wall becomes critical due to large access latency and tremendous amount of data movement. In this work, we pursue cryogenic temperature based memory design and focus on spin-transfer-torque magnetoresistive random access memory (STT-MRAM) at 77-Kelvin (achieved with low-cost liquid nitrogen). Cryogenic compact model and related ...
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关键词
Semiconductor device modeling,Energy consumption,Computational modeling,Cryogenics,Voltage,Writing,Sensors
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