4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses

Fengben Xi,Yi Han,Andreas Tiedemann,Detlev Grützmacher,Qing-Tai Zhao

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)（2021）

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摘要

In this paper, artificial synapses based on 4-terminal ferroelectric Schottky barrier field effect transistors (FE-SBFETs) are experimentally demonstrated. The ferroelectric polarization switching dynamics gradually modulate the Schottky barriers, thus programming the device conductance by applying positive and negative pulses to imitate the excitation and inhibition behaviors of biological synaps...

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关键词

Neuromorphics,Schottky barriers,Field effect transistors,Europe,Voltage,Switches,Programming

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