Resistive Switching and Memory Effects in Composite Films Based on Graphene Oxide in a Matrix of Organometallic Perovskites

The resistive switching effect is studied in composite films based on organometallic perovskites CH 3 NH 3 PbBr 3 and CH 3 NH 3 PbI 3 with graphene oxide (GO) particles with concentration 1–3 wt % and a layer of [60]PCBM fullerene. It is found that the resistive switching effect in Ag/[60]PCBM/CH 3 NH 3 PbBr 3 (I 3 ): GO/PEDOT:PSS/ITO/glass films is observed as a sharp change from a low-conductivity state to high-conductivity state as both positive and negative biases are applied to Ag and ITO electrodes in the darkness and during illumination by a sunlight imitator. The resistive switching mechanism is assumed to be related to the capture and accumulation of charge carriers in GO particles due to the reduction/oxidation processes. The composite films studied in this work are promising for the creation of non-volatile memory cells.