A HfO 2 Ferroelectric Capacitor based 10T2C High Reliability Non-Volatile SRAM for Low Power IoT Applications

Jing Li,Yulin Zhao,Bo Peng,Xuanzhi Liu,Qiao Hu,Sheng Dai,Jianguo Yang,Yuejun Zhang

2021 IEEE 14th International Conference on ASIC (ASICON)（2021）

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摘要

This paper presents a novel 10T2C non-volatile SRAM (nvSRAM) based on HfO2 ferroelectric capacitor (FeCAP) for low power IoT applications. Emerging memory based nvSRAM has attracted more and more attention for zero-standby-power and fast store/restore speed. The proposed 10T2C cell utilizes a pair of FeCAPs as non-volatile storage elements to improve restore yield. FeCAPs are connected ...

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关键词

Semiconductor device modeling,Nonvolatile memory,Capacitors,Random access memory,Mathematical models,Data models,Hafnium compounds

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