Investigation of Two Bits with Multistate Antifuse on Nmos Poly-Silicon Junctionless GAA OTP
IEEE Transactions on Electron Devices（2021）
关键词
Logic gates,Gallium arsenide,Electric breakdown,Monitoring,Breakdown voltage,Performance evaluation,MOS devices,3-D IC,antifuse,gate-all-around (GAA),junctionless transistor,multistate,nanowire,nMOS,one-time programmable (OTP) memory,poly-si
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