Simulation Study of a p -GaN HEMT With an Integrated Schottky Barrier Diode

Bo Yi,Zheng Wu,Junji Cheng,Haimeng Huang,Weijia Zhang,Wai Tung Ng

IEEE Transactions on Electron Devices（2021）

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摘要

In this article, a novel ${p}$ -GaN high-electron-mobility transistor (HEMT) with a built-in Schottky barrier diode (SBD) is proposed and investigated by TCAD simulation. The anode contact of the integrated SBD is isolated from the ohmic contact of the source electrode by a ${p}$ 更多

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关键词

HEMTs,Schottky barriers,Schottky diodes,Voltage,Logic gates,Anodes,MODFETs

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