Low Thermal Budget Fabrication and Performance Comparison of MFM Capacitors With Thermal and Plasma-Enhanced Atomic Layer Deposited Hf 0.45 Zr 0.55 O x Ferroelectrics

The ferroelectricity of Zr-doped HfO2 (HZO) thin films induced by low thermal budget annealing provides great potential to implement the ferroelectric functionalities into the back end of line (BEOL) process of the standard CMOS integrated circuits. However, most of previous works need high temperature annealing or long time annealing to acquire ferroelectricity. In this work, both anne...