Influence of Reduction in Effective Channel Length on Device Operations of In-Ga-Zn-O Thin-Film Transistors With Variations in Channel Compositions

Device scaling of oxide-channel thin-film transistors (TFTs) toward sub-micrometer regime has been an urgent issue to realize higher-resolution displays and 3-D structured electronic devices. The channel-shortening effect is a serious problem in implementing the oxide TFTs with short channel lengths. In this work, the short-channel effects (SCEs) of the In-Ga-Zn-O (IGZO) TFTs were investigated wit...