谷歌浏览器插件
订阅小程序
在清言上使用

Metal Migration Induced Breakdown from Gate Contact in Bulk FinFET Devices

2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)(2021)

引用 1|浏览5
关键词
fin field-effect transistors,direct current breakdown,transmission line pulse,transmission electron microscopy,device reliability
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要