AlGaN-based UV-B laser diode fabricated on AlN with 1 μm periodic concave and convex patterns

Ayumu Yabutani,Tomoya Omori,Moe Shimokawa,Ryota Hasegawa,Sho Iwayama,Motoaki Iwaya,Tetsuya Takeuchi,Satoshi Kamiyama,Hideto Miyake

2021 27th International Semiconductor Laser Conference (ISLC)（2021）

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摘要

In this study, we fabricated a UV-B laser diode on high-quality AlGaN fabricated on AlN with periodic concave and convex patterns. The lasing wavelength and threshold current density of the laser diode were 301 nm and 22 kAcm^-2, respectively.

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关键词

Semiconductor lasers,Threshold current,Diode lasers,Wide band gap semiconductors,III-V semiconductor materials,Aluminum gallium nitride,Aluminum nitride

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