Direct Measurement of Internal and External Quantum Efficiency in InGaN Quantum-Well Active Layers

Keito Mori,Yuchi Takahashi,Shigeta Sakai,Yuya Morimoto,Atsushi A. Yamaguchi,Susumu Kusanagi,Yuya Kanitani,Yoshihiro Kudo,Shigetaka Tomiya

2021 27th International Semiconductor Laser Conference (ISLC)（2021）

引用 0|浏览0

暂无评分

摘要

Internal quantum efficiency (IQE) in InGaN quantum-well active layers have been estimated by simultaneous photoacoustic and photoluminescence measurements. Furthermore, external quantum efficiency has been estimated for the same samples by the integrating-sphere method, and the results have been compared with IQE values.

查看译文

关键词

Semiconductor device measurement,Semiconductor lasers,Quantum wells,Measurement by laser beam,Photoluminescence

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要