Ternary Sense Amplifier Design for Ternary SRAM

Minjeong Choi,Youngchang Choi,Sunmean Kim,Seokhyeong Kang

2021 18th International SoC Design Conference (ISOCC)（2021）

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摘要

This paper proposes the design of a Ternary Sense Amplifier (T-SA) using Samsung-28nm fabrication process that can sense three states, which are VDD, VDD/2, and GND. The T-SA has a ternary inverter back-to-back structure, and is configured as a latch type. The trade-off relationship between sensing margin and sensing speed was analyzed according to the size. The T-SA may enable the realization of ...

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关键词

Semiconductor device modeling,Fabrication,Latches,Random access memory,Multivalued logic,Inverters,Sensors

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