Spin memory effect in charged single telecom quantum dots
OPTICS EXPRESS(2021)
摘要
Single InP-based quantum dots emitting in the third telecom window are probed quasi-resonantly in polarization-resolved microphotoluminescence experiments. For charged quantum dots we observe negative circular polarization being a fingerprint of the optical spin writing of the carriers within the quantum dots. The investigated quantum dots have a very dense ladder of excited states providing relatively easy quasi-resonant optical excitation, and together with telecom wavelengths emission they bring quantum gates and memories closer to compatibility with fiber-optic communication. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
更多查看译文
关键词
memory effect,spin,quantum
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要