Effect of ultraviolet and room lights on porous GaN films using photo-assisted electrochemical etching

Materials Letters(2021)

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摘要
•UV-light increases the reflectivity of the GaN/NP-GaN DBR by 5.5%.•The effect of the UV-light on the etching was studied.•The mechanism of the light on etching was revealed.
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关键词
Porous materials,Semiconductors,Optical materials and properties,Structural,Corrosion
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