Improving The Electrical Properties Of Tiox Schottky-Type Diode With An Extra Zro2 Insulating Layer

Titanium oxide has been considered a promising candidate for Schottky-type diode application. In this paper, an alternative approach for improving electrical properties of TiOx-based Schottky-type diode has been demonstrated. Compared with the Ag/TiOx/Ti structure Schottky-type diode, by embedding an extra ZrO2 insulating layer between the Ag/TiOx interface, an extremely high rectifying ratio of 10(9) can be obtained in the Ag/ZrO2/TiOx/Ti structure device. The improvement of the electrical properties in the Ag/ZrO2/TiOx/Ti structure device can be attributed to the localized formation of Ag metal conductive filaments in ZrO2 layer after switching on.