Modification mechanism of collaborative ions implanted into 4H-SiC by atomic simulation and experiment

Qiang Kang,Xudong Fang,Chen Wu,Hao Sun,Bian Tian,Libo Zhao,Songli Wang,Zhuangde Jiang,Nan Zhu,Ryutaro Maeda,Meiju Zhang,Yuanjie Lv

International Journal of Mechanical Sciences（2021）

引用 12|浏览12

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摘要

•Establish a model for SiC modification with collaborative implantation of Cu2+ and H+.•Collaborative implantation significantly increases the projection range of H+.•Residual stress induced in the model is reduced by high temperature annealing.•Quantitative comparison of damage depth between MD simulations and experiments.

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关键词

Molecular dynamics simulation,Ion implantation,Projection range,Subsurface damage,Residual stress

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