High-Order Harmonic Generation In 2d Transition Metal Disulphides

In this paper, we explore the capabilities of MoS2 and WS2 2D monolayers to produce radiation in the terahertz range by the generation of high-order harmonics. This phenomenon, which is a result of the non-linear response of the electronic carrier population to the applied electric field, is studied by using a particle ensemble stochastic simulation approach based on the Monte Carlo method. The power of the produced harmonic signals is studied against the electric field amplitude, the external temperature, and the frequency of the excitation. Additionally, the stochastic nature of the simulation tool enables us to discern the purely discrete harmonic signal from the background spectral noise that comes from intrinsic carrier velocity fluctuations in the diffusive regime, permitting to set bandwidth thresholds for harmonic extraction. It was found that both TMDs showed similar bandwidth thresholds when compared to the III-V semiconductor at low temperatures, while WS2 would be a far better choice over MoS2 for exploitation of the seventh and ninth harmonic generation.