Beta-Ga2o3 Epitaxial Growth On Fe-Gan Template By Non-Vacuum Mist Cvd And Its Application In Schottky Barrier Diodes

In this work, we report on demonstrating lateral beta-Ga2O3 Schottky barrier diodes (SBDs) fabricated on Fe-GaN/sapphire (0001) substrates by using the non-vacuum, low-cost mist chemical vapor deposition (mist CVD) method for the first time. The x-ray diffraction scanning pattern identifies that beta-Ga2O3 layers are grown with (-201) planes parallel to the (0001) plane of the GaN template, and the transmission electron microscopy shows that the beta-Ga2O3 lattice is regularly and neatly arranged, indicating good crystal quality. beta-Ga2O3 based SBDs with 4 and 20 mu m anode-cathode lengths (L-AC) exhibit the specific on-resistance (R-on,R-sp) of 1.58 and 39.8 Omega cm(2) and breakdown voltage (V-br) of 580 and 2400 V, respectively. The present results show the great potential of the non-vacuum and cost-effective mist CVD method as the epitaxial growth technique employed in beta-Ga2O3 devices.