The optimization of InGaAs/InGaP quantum wells grown by gas source molecular beam epitaxy

Xuyi Zhao,Wenfu Yu,Shixian Han,Antian Du,Siwei Lin,Min Li,Chunfang Cao,Jin Yang,Hua Huang,Hailong Wang,Qian Gong

Journal of Crystal Growth（2021）

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摘要

•Growth optimization of InGaAs/InGaP quantum wells has been achieved.•The GaAs insert layer affect the optical properties of quantum well.•The optimal thickness of GaAs insert layer is around 3 monolayers.•The growth mechanism of GaAs insertion layer is discussed.

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关键词

A1. Photoluminescence,A3. Quantum wells,A3. Molecular beam epitaxy,B2. Semiconducting III–V Materials

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