Low-Temperature-Grown Single-Crystal Si Epitaxially On Ge, Followed By Direct Deposition Of High-Kappa Dielectrics-Attainment Of Low Interfacial Traps And Highly Reliable Ge Mos

Single-crystal silicon (Si) of six monolayer thickness was epitaxially grown on epi-germanium (Ge) in the (001) orientation at substrate temperatures lower than 300 degrees C, followed by direct deposition of hafnium oxide (HfO2) and aluminum oxide (Al2O3) under ultra-high vacuum. We monitored and studied the Si growth and its epitaxy with the epi-Ge substrate using in-situ reflection high-energy electron diffraction and high-resolution synchrotron radiation X-ray diffraction. Using the gate stacks, we obtained interfacial trap densities of (1-3) x 10(11) eV(-1) cm(-2) without the use of high-pressure hydrogen annealing and a highly reliable Ge p-type metal-oxide semiconductor with a high acceleration factor of 11.