Atomic Layer Deposition Plasma-Based Undoped-HfO2 Ferroelectric FETs for Non-Volatile Memory
IEEE Electron Device Letters（2021）
摘要
A plasma-based undoped-HfO
2
FeFET (ferroelectric FET) with non-volatile memory characteristics is demonstrated. Modifying the O
2
plasma period in plasma-enhanced atomic layer deposition (PE-ALD) is an effective approach to enhance the remnant polarization ( P
r
) up to 2P
r
= 25 μC/cm
2
for the MFM (metal/ferroelectric/metal) structure with ferroelectric undoped-HfO
2
thin films, and successful integration is implemented for the FeFET. The appropriate O
2
vacancies ( V
o
2+
) benefit the formation of the ferroelectric phase since they play the role of dopants and help orthorhombic phase (o-phase) formation during post-metal annealing (PMA). The V
o
2+
-rich undoped-HfO
2
FeFET exhibits a memory window (MW) of 0.5 V, 5 ×10
4
switching endurance cycles, and higher than $10^{{4}}$ sec of data retention with V
P/E
= ±5 V.
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关键词
Undoped-HfO₂,FeFET,retention,endurance
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