Defect Characterization in High‐Electron‐Mobility Transistors with Regrown P‐gan Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy
physica status solidi (a)（2021）
Key words
deep-level transient spectroscopy,defects characterization,e-mode GaN high electron mobility transistors,low-frequency noises,regrowth p-GaN gates
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