Integration Of Quantum Dots And Quantum Wells Into Ingaas Metamorphic Subcell For Radiation Hard 3-J Elo Imm Photovoltaics

In this work, a Sentaurus TCAD model of inverted metamorphic triple junction solar cells is demonstrated along with experimental 3J current-voltage and external quantum efficiency measurements for the purpose of predicting end-of-life efficiency improvement from incorporating quantum wells or quantum dots into a metamorphic In0.3Ga0.7As subcell in a 3J solar cell. A radiation-hard "end-of-life optimized" design is presented and end-of-life efficiency enhancement is predicted from calculated QD and QW absorption coefficients. The resulting QW enhanced solar cell design is predicted to have a 6% relative efficiency enhancement over the optimized" baseline design.