Ultra-scaled MOCVD MoS 2 MOSFETs with 42nm contact pitch and 250µA/µm drain current

Quentin Smets,Benjamin Groven,Matty Caymax,Iuliana Radu,Goutham Arutchelvan, J. Jussot,Devin Verreck,Inge Asselberghs,Ankit Nalin Mehta,Abhinav Gaur,Dennis Lin,Salim El Kazzi

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2019）

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摘要

We show that downscaling the top-contact length to 13nm induces no penalty on the electrical characteristics for CVD MoS 2 FETs. We demonstrate this for devices with different gate-oxides and operating in both channel and contact-limited regimes, thus confirming carrier injection at the edge of the contact metal. Consequently, we have scaled the device footprint achieving an I on =250μA/μm and excellent SS min =80mV/dec for 50nm SiO 2 and 4nm HfO 2 gate oxides, respectively.

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关键词

contact pitch,top-contact length,electrical characteristics,gate-oxides,carrier injection,contact metal,device footprint,ultra-scaled MOCVD MOSFETs,drain current,contact-limited regimes,size 4.0 nm,size 42.0 nm,size 13.0 nm,size 50.0 nm,MoS2,SiO2,HfO2

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