A 0.8 µm Smart Dual Conversion Gain Pixel for 64 Megapixels CMOS Image Sensor with 12k e- Full-Well Capacitance and Low Dark Noise

Donghyuk Park, Woong Joo,Yun-Ki Lee,Seungjoo Nah,H.S. Jeong,Bum-Suk Kim,Sang-il Jung,Jesuk Lee,Yi-tae Kim,Chang-Rok Moon,Yongin Park,Seung-Wook Lee, Jinhwa Han,Dongyoung Jang, Hee-sang Kwon,Seungwon Cha,Mi Hye Kim,Haewon Lee,Sungho Suh

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2019）

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摘要

A 0.8 μm-pitch 64 megapixels ultrahighresolution CMOS image sensor has been demonstrated for mobile applications for the first time. Full-well capacity (FWC) of 6k e- was achieved in 0.8 μm pixels as the best in the world, and the advanced color filter (CF) isolation technology was introduced to overcome sensitivity degradation. Dual conversion gain (CG) technology was also first applied to mobile applications to improve the FWC performance of Tetracell up to 12k e-. In addition, highly refined deep trench isolation (DTI) and photodiode design significantly improved dark noise characteristics.

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关键词

low dark noise,mobile applications,advanced color filter isolation technology,dual conversion gain technology,improved dark noise characteristics,ultrahigh-resolution CMOS image sensor,e-full-well capacitance,smart dual conversion gain pixel,full-well capacity,sensitivity degradation,advanced color filter isolation technology,deep trench isolation,DTI,photodiode design,picture size 64 Mpixel

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