Epitaxial Film Growth By Thermal Laser Evaporation

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A(2021)

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摘要
We demonstrate the epitaxial growth of thin films by thermal laser evaporation. Epitaxial metal oxide films are grown by laser evaporating Ni, V, and Ru elemental sources in a variety of oxygen-ozone atmospheres on laser-heated oxide substrates. This results in NiO (111), VO2 (M1) (020), and RuO2 (110) epitaxial films on Al2O3 (0001) or MgO (100) substrates. The films show well-defined crystallographic orientation relationships with the substrates, as confirmed by in-plane and out-of-plane x-ray measurements. The results reveal the potential of thermal laser epitaxy for the epitaxial growth of ultrahigh-purity oxide heterostructures.
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