Efficient Interlayer Electron Transfer In A Mote2/Ws2/Mos2 Trilayer Heterostructure

Electron transfer and carrier dynamics in MoTe2/WS2/MoS2 trilayer heterostructures are investigated by transient absorption and photoluminescence measurements. Monolayer flakes of MoTe2, WS2, and MoS2 are obtained by mechanical exfoliation from their bulk crystals and are used to fabricate the heterostructures by a dry-transfer technique. Photoluminescence spectroscopic measurements indicate that the recombination of the MoS2 and WS2 intralayer excitons is significantly suppressed in the heterostructure, illustrating the efficient interlayer charge transfer processes. Layer-selective time-resolved differential reflectance measurements show that the electrons excited in MoTe2 can transfer to MoS2 within 0.3 ps. The transferred electrons show a long lifetime of several hundred picoseconds due to their slow recombination with the spatially separated holes that reside in MoTe2. Furthermore, the charge transfer and recombination processes are weakly dependent on the injected carrier density. These results demonstrate the feasibility of constructing van der Waals multilayer heterostructures involving the infrared-sensitive MoTe2 with emergent properties and provide important information to quantify the performance of MoTe2-based devices.