C-axis aligned crystalline indium-gallium-zinc oxide (CAAC-IGZO) and high-k charge trapping film for flash memory application

Soonoh Jeong,Seokmin Jang,Hoonhee Han,Hyeontae Kim,Changhwan Choi

Journal of Alloys and Compounds（2021）

引用 10|浏览4

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摘要

•CAAC-IGZO was obtained by Ta induced crystallization with post-annealing.•Al2O3/HfO2/Al2O3 were adopted for blocking, charge trapping, and tunneling layer, respectively.•Memory characteristics are improved with CAAC-IGZO/high-k thin films.

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关键词

CAAC-IGZO,Metal-induced crystallization,Charge trap memory,Thin film transistor

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