Anisotropic Effects Of Oxygen Vacancy Defects On The Electrical Properties Of Highly Oriented Bismuth Titanate Ferroelectric Ceramics

Bismuth titanate (Bi4Ti3O12, BIT) exhibits a high Curie temperature and anisotropic electrical performance owing to its layered perovskite structure, and hence, it is an important ferroelectric material for high-temperature piezoelectric applications. It is crucial to understand the effects of the anisotropy in BIT-based ferroelectrics for developing novel high-temperature piezoelectric materials. In this study, a highly textured BIT ceramic was fabricated using the tape-casting technique from highly grain-oriented BIT platelets prepared by the molten salt method. The textured BIT ceramic showed a dense microstructure and high grain orientation along the (00l) plane with a texturing degree F00l = 0.86. It exhibited significant anisotropy in the electrical properties along the directions parallel and perpendicular to the axis of the tape-casting plane. Double ferroelectric hysteresis P-E loops and normal ferroelectric P-E loops were observed in the parallel and perpendicular samples, respectively. In addition to the layered crystal structure and domains, the anisotropy in the arrangement of the oxygen vacancy defects and their transport in the structure led to a significant anisotropy in the ferroelectric properties of the textured BIT ceramics. This work demonstrates the anisotropic arrangement of the oxygen vacancy defects and its effect on the electrical properties of high-temperature bismuth layer-structured ferroelectrics.