Multifold enhancements in thermoelectric power factor in isovalent sulfur doped bismuth antimony telluride films

John Kennedy,Peter P. Murmu,Pawan Kumar,Ganpati Ramanath

Materials Research Bulletin（2021）

引用 23|浏览3

暂无评分

摘要

•Up to four-fold increase in power factor in sputter-deposited Bi0.5Sb1.5Te3 films.•Near surface S doping increased electrical conductivity and seebeck coefficient.•Isovalent impurities doping into pnictogen chalcogenides yields high power factor.

查看译文

关键词

Thermoelectric,Bismuth antimony telluride,Ion implantation,Sulfur doping,Power factor

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要