Nonvolatile Flexible Memory Based On A Planar Zigzag-Type Nitrogen-Doped Picene

ADVANCED INTELLIGENT SYSTEMS(2020)

引用 54|浏览9
暂无评分
摘要
The wearable information storage devices have aroused particular attention due to their great promise in smart electronics and healthcare service. These devices require all the memory circuit components to be flexible and stretchable, especially for the memory storage elements. Herein, a planar zigzag-structured nitrogen-doped picene is successfully constructed as the active layer to obtain resistive switching memory devices, which possess both robust mechanical flexibility and electrical reliability. Attributed to the large-area film morphological uniformity, the nonvolatile flexible memory devices exhibit highly reproducible resistive switching behavior, accompanying with concentrated distributions of switching voltages and resistance states under repetitive conformal deformation operation. The insight gained from this work may afford new opportunities for realizing high-performance wearable information storage electronics.
更多
查看译文
关键词
data storage, flexible memory, nitrogen-doped materials, nonvolatile memory, organic electronics
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络