Nonvolatile Flexible Memory Based On A Planar Zigzag-Type Nitrogen-Doped Picene

The wearable information storage devices have aroused particular attention due to their great promise in smart electronics and healthcare service. These devices require all the memory circuit components to be flexible and stretchable, especially for the memory storage elements. Herein, a planar zigzag-structured nitrogen-doped picene is successfully constructed as the active layer to obtain resistive switching memory devices, which possess both robust mechanical flexibility and electrical reliability. Attributed to the large-area film morphological uniformity, the nonvolatile flexible memory devices exhibit highly reproducible resistive switching behavior, accompanying with concentrated distributions of switching voltages and resistance states under repetitive conformal deformation operation. The insight gained from this work may afford new opportunities for realizing high-performance wearable information storage electronics.