Influence of YVO 4 and BiР x V 1 – x O 4 Nanoscale Layers on the Surface of InP on the Thermal Oxidation of the Semiconductor, Phase Composition and Morphology of Films

— The strong chemical-stimulating and modifying effect of BiР x V 1 – x O 4 on the process of InP thermal oxidation, which consists in blocking the diffusion of non-oxidized In into the forming films and the intense formation of a vanadate-phosphate skeleton, is established. The presence of V 2 O 5 in the synthesized films, which has catalytic activity in the processes under study, with an effective activation energy of about 50 kJ/mol and a large relative increase in the thickness throughout the entire process, suggests a catalytic component of the oxidation mechanism. The formation of the phosphate skeleton of the films during the oxidation of YVO 4 /InP occurs due to secondary interactions of the oxidized components of the semiconductor similar to the mechanism of the intrinsic oxidation of indium phosphide.