Towards A Iii-V Solar Cell With A Metamorphic Graded Buffer Directly Grown On V-Groove Si Substrates

V-groove Si substrates offer a promising route for the direct growth of III-V solar cells on low-cost, photovoltaicgrade Si. In this work, we develop a method for coalescing GaP nucleated on V-groove substrates into thin films suitable for the growth of III-V solar cells. We demonstrate the ability to suppress nucleation-related defects by modifying the V-groove substrate to cover the (0 0 1)-oriented Si V-groove tops with SiN infinity. A threading dislocation density (TDD) of 5 x 10(7) cm was measured with electron channeling contrast imaging. Continuing work will focus on further reducing the TDD and the growth of a GaAs solar cell on a GaP on V-groove Si template.