Enhancement of energy storage density achieved in Bi-modified SrTiO3 thin films by introducing a TiO2 layer

Journal of Alloys and Compounds（2021）

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摘要

•Sr0.88Bi0.08TiO3/TiO2 thin films were fabricated via sol-gel method with annealing temperature ranging from 450 °C to 600 °C.•By introducing a TiO2 layer, crystallization temperature of thin films was reduced, leading to a high energy storage density.•The ultrahigh energy storage density of 32.6 J/cm3 is achieved for Sr0.88Bi0.08TiO3/TiO2 thin films annealed at 450 °C.

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关键词

Sr0.88Bi0.08TiO3 thin films,One-step annealing,Seeding layer,Breakdown strength,High energy storage density

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