Formation Of Various-Axis-Oriented Wurtzite Nuclei And Enlargement Of The A-Axis-Oriented Region In Alfen Films Deposited On Si(100) Substrates

Wurtzite AlN films with high Fe concentrations were deposited on Si(100) substrates using radio-frequency sputtering, and the growth process was investigated. X-Ray diffraction (XRD) analysis with parallel incident X-rays showed that a thick film (similar to 2.5 mu m) had a non-polar a-axis orientation, similar to the films deposited on SiO2 glass substrates. Through powder XRD analysis, it was found that non-wurtzite fine crystals and/or amorphous materials formed during the initial stage of deposition, followed by wurtzite nucleation with various orientations of the axes, such as a, m, and r orientations. The XRD results also implied that the a-axis-oriented regions drastically increased with increasing film thickness. Scanning transmission electron microscopy (STEM) and energy-dispersive X-ray spectroscopy analyses suggested that one of the candidates for the non-wurtzite fine crystalline material was gamma-Al2O3. STEM analysis also demonstrated that a-axis-oriented single-crystal grains grew from randomly oriented small wurtzite grains that increased in diameter with increasing deposition time. Al K-edge X-ray absorption near-edge structure results suggested that the electronic structure in the polar c-axis direction of wurtzite lying in the film plane developed with deposition time, thereby further supporting the findings of the XRD and STEM analyses.