High-Power And Brightness Laser Diode Modules Using New Dbr Chips

HIGH-POWER DIODE LASER TECHNOLOGY XVI(2018)

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摘要
The paper reports on the design, manufacturing and preliminary characterization of a new family of compact and high beam quality multi-emitter laser diode modules capable of delivering up to over 400 W in a 135/0.15 fiber. The layout exploits a proprietary architecture and is based on innovative narrow linewidth high-power DBR chips, properly combined through spatial, polarization and wavelength multiplexing. The intrinsic wavelength stabilization of these DBR chips allows the use of the developed modules not only for direct-diode material processing but also in pump sources for ytterbium-doped fiber lasers without the need of external stabilization devices.
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关键词
Multi-emitter diode module, High-brightness laser diodes, High power laser diodes
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